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Information × Registration Number 0111U004315, ( 0212U000269  ) R & D request Title "Development of interferential nanolithography methods for formation of relief-phase structures by using of vacuum photoresists" 2 stage -"Investigation and optimisation of the inteference exposure of inorganic photoresists using immersion" Head Indutnyi Ivan , Доктор фізико-математичних наук Registration Date 18-04-2011 Organization V. Lashkaryov Institute of semiconductor physics popup.description1 popup.nrat_date 2024-12-10 Close
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"Development of interferential nanolithography methods for formation of relief-phase structures by using of vacuum photoresists" 2 stage -"Investigation and optimisation of the inteference exposure of inorganic photoresists using immersion"
Head: Indutnyi Ivan . "Development of interferential nanolithography methods for formation of relief-phase structures by using of vacuum photoresists" 2 stage -"Investigation and optimisation of the inteference exposure of inorganic photoresists using immersion". V. Lashkaryov Institute of semiconductor physics. № 0111U004315
1 documents found

Updated: 2026-03-19


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