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Information × Registration Number 0113U002132, ( 0213U004608  ) R & D request Title "Development of interferential nanolithography methods for formation of relief-phase structures by using of vacuum photoresists" 4 stage -"Investigation and development of liquid immersion photolithography based on chalcogenide photoresists" Head Indutnyi Ivan , Доктор фізико-математичних наук Registration Date 13-02-2013 Organization V. Lashkaryov Institute of semiconductor physics popup.description1 popup.nrat_date 2024-12-10 Close
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"Development of interferential nanolithography methods for formation of relief-phase structures by using of vacuum photoresists" 4 stage -"Investigation and development of liquid immersion photolithography based on chalcogenide photoresists"
Head: Indutnyi Ivan . "Development of interferential nanolithography methods for formation of relief-phase structures by using of vacuum photoresists" 4 stage -"Investigation and development of liquid immersion photolithography based on chalcogenide photoresists". V. Lashkaryov Institute of semiconductor physics. № 0113U002132
1 documents found

Updated: 2026-03-17


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