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Information × Registration Number 0114U001616, ( 0214U000982  ) R & D request Title Development of interferential nanolithography methods for formation of relief-phase structures by using of vacuum photoresists" 5 stage -"Investigation and development of solid-immersion photolithography based on chalcogenide photoresist. Preparation of the final report Head Indutnyi Ivan , Доктор фізико-математичних наук Registration Date 25-03-2014 Organization V. Lashkaryov Institute of semiconductor physics popup.description1 popup.nrat_date 2024-12-10 Close
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Development of interferential nanolithography methods for formation of relief-phase structures by using of vacuum photoresists" 5 stage -"Investigation and development of solid-immersion photolithography based on chalcogenide photoresist. Preparation of the final report
Head: Indutnyi Ivan . Development of interferential nanolithography methods for formation of relief-phase structures by using of vacuum photoresists" 5 stage -"Investigation and development of solid-immersion photolithography based on chalcogenide photoresist. Preparation of the final report. V. Lashkaryov Institute of semiconductor physics. № 0114U001616
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Updated: 2026-03-21


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