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Information × Registration Number 0118U004772, ( 0218U003990  0218U001946  ) R & D request Title Development of the new technological principles for creation of planar composite nanostructures based on oxide silicon with reactive inductive impedance Head Євтух Анатолій Антонович, Registration Date 30-05-2018 Organization V. Lashkaryov Institute of semiconductor physics popup.description1 popup.nrat_date 2024-12-10 Close
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Development of the new technological principles for creation of planar composite nanostructures based on oxide silicon with reactive inductive impedance
Head: Євтух Анатолій Антонович. Development of the new technological principles for creation of planar composite nanostructures based on oxide silicon with reactive inductive impedance. V. Lashkaryov Institute of semiconductor physics. № 0118U004772
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Updated: 2026-03-16


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