1 documents found
Information × Registration Number 0119U002968, R & D request Title Study of the influence of technological operations on electrophysical parameters semiconductor structures when creating photodiodes. Material impact study for protection of the surface of the photodiode crystal on electrophysical characteristics semiconductor structures of photodiodes, material selection. Head Радкевич Олександр Іванович, Registration Date 07-10-2019 Organization State Scientific Institution “Institute for Single Crystals” of National Academy of Sciences of Ukraine popup.description1 popup.nrat_date 2024-12-10 Close
search.res_rk
Study of the influence of technological operations on electrophysical parameters semiconductor structures when creating photodiodes. Material impact study for protection of the surface of the photodiode crystal on electrophysical characteristics semiconductor structures of photodiodes, material selection.
Head: Радкевич Олександр Іванович. Study of the influence of technological operations on electrophysical parameters semiconductor structures when creating photodiodes. Material impact study for protection of the surface of the photodiode crystal on electrophysical characteristics semiconductor structures of photodiodes, material selection.. State Scientific Institution “Institute for Single Crystals” of National Academy of Sciences of Ukraine. № 0119U002968
1 documents found

Updated: 2026-03-18


Роздрукувати цю сторінку