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Information × Registration Number 0121U113827, ( 0222U001225  ) R & D request Title Modification and investigation of optoelectronic properties of ZnO thin films and nanostructures for photovoltaic applications Head Vasin Andrii V., д.ф.-м.н. Registration Date 12-11-2021 Organization VE Lashkarev Institute of Semiconductor Physics of the National Academy of Sciences of Ukraine popup.description1 Investigation of plasma-chemical effects of methane on the structure, morphology, optical and electrical properties of ZnO films during deposition by reactive magnetron sputtering. Decrease of electrical resistivity (preferably below 10-2 Ohm * cm) with maximum optical transparency (preferably at 90% at a film thickness of 1 μm). popup.nrat_date 2024-12-09 Close
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Head: Vasin Andrii V.. Modification and investigation of optoelectronic properties of ZnO thin films and nanostructures for photovoltaic applications. VE Lashkarev Institute of Semiconductor Physics of the National Academy of Sciences of Ukraine. № 0121U113827
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Updated: 2026-03-21