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Information × Registration Number 0122U000791, ( 0222U002223  ) R & D request Title Development of processes for the formation of periodically ordered plasmonic nanostructures by interference photolithography based on chalcogenide semiconductors, production of experimental samples and study of their characteristics. Stage 2 "Study of morphological and optical characteristics of experimental samples of PPN with correlated relief" Head Indutnyi Ivan Z., д.ф.-м.н. Registration Date 31-01-2022 Organization VE Lashkarev Institute of Semiconductor Physics of the National Academy of Sciences of Ukraine popup.description1 The aim of the second stage of the project is to experimentally establish a correlation between morphological and optical characteristics of plasmon nanostructures popup.nrat_date 2024-12-09 Close