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Information × Registration Number 0124U001131, R & D request Title Specific features of crystallization in phase-change thin-film materials based on amorphous chalcogenides Head Gomonnai Oleksandr V., д.ф.-м.н. Registration Date 29-01-2024 Organization Institute of Electronic Physics of the National Academy of Sciences of Ukraine popup.description1 The aim of the research project is to elucidate the specific features of stimulated crystallization in phase-change thin-film materials based on amorphous chalcogenides, in particular to specify conditions of fabrication of bulk and thin-film non-crystalline tellurium-containing phase-change materials, to study the processes of formation of SnS2 and Bi2S3 type nanocrystals in Bi- and Sn-doped amorphous arsenic sulphide films as well as their behaviour under external factors (illumination by a tightly focused laser beam and thermal treatment). All-round physical and chemical studies of the crystallization processes by X-ray structural, electrical, optical (reflection, ansorption, and Raman scattering), and calorimetric techniques are envisaged. popup.nrat_date 2024-12-09 Close