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Information × Registration Number 0124U002531, ( 0225U002273  ) R & D request Title Terahertz optoelectronics in novel low dimensional narrow gap semiconductor nanostructures Head Humenjuk-Sichevska Janna V., Доктор фізико-математичних наукSyzov Fedir F., д.ф.-м.н. Registration Date 21-03-2024 Organization V. Lashkaryov Institute of Semiconductor Physics of National Academy popup.description1 The central goal of the proposed Partnership is to support and further develop the network between German and Ukrainian groups, established in the previous period of the program. The network combines the expertise of the involved groups, results in exchange of know-how, provides access to complementary available equipment and materials, extends the technical capabilities of the consortium and improves education of the involved young scientists in a topical area of modern science. The scientific objectives of the project involve basic research in the area of THz opto-electronics and optics. In particular, we plan to explore the physics of the recently observed THz giant photoconductivity in QPC operating in the tunneling regime, and THz ratchet effects in 2D systems with lateral superlattices. Because these are new fields, experiments will be accompanied by theory. Further goal to be achieved is the development of novel THz detectors and real-time vision system. The project is focused on HgTe-based systems. The analysis and characterization of novel TI materials, which in turn provides important feedback to the technologically oriented groups, is an important goal of our proposal. To obtain a more complete picture of THz opto-electronic phenomena under study, we will also investigate mono and bi-layer graphene encapsulated in h-BN. Graphene is, as HgTe in the topological regime, characterized by a Dirac type of band dispersion. popup.nrat_date 2024-12-09 Close