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Information × Registration Number 0203U000017, 0100U000112 , R & D reports Title Study of interface electron processes in thin-film heterostructures fabricated on the basis of IV group materials at wide temperature range and under hursh conditions popup.stage_title Head Lysenko Vladamir Sergeevich, Registration Date 08-01-2003 Organization Institute of Semiconductor Physics of National Academy of Sciences of Ukrain popup.description2 For the first time electron and hole trapping have been studied and charge traps parameters in active region of electroluminescent a-Si:H(Er)/Si and SiO2(Ge)/Si structures have been determined; the mechanisms of electroluminescence in the a-Si:H(Er)/Si structures and dielectric degradation in theSiO2(Ge)/Si under effect of high electric field have been proposed; mechanisms of positive charge generation in the buried oxide of the silicon-on-insulator structures have been found out; in wide temperature range (4-300K) the processes of trapping charge in SiO2/6H-SiC interface have been studied in the structures with different kinds of dielectrics. Product Description popup.authors popup.nrat_date 2020-04-02 Close