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Information × Registration Number 0203U000934, 0100U003478 , R & D reports Title The investigations of influence of isovalent on the processes of formation of radiation and thermal complexes in silicon popup.stage_title Head Danilchenko B.A., Registration Date 27-03-2003 Organization Institute of physics NASU popup.description2 It was shown that time of life minority carriers in (-irradiated n-Si is non-monotone function of Sn concentration. In crystals of Si1-xGex with x>1% after electron irradiation, the typical for Si divacancies are observed, as well as its complexes with Ge atoms, V2Ge. The origin of phonon induced conductivity change of (-do5635 Product Description popup.authors popup.nrat_date 2020-04-02 Close