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Information × Registration Number 0203U002343, 0100U001551 , R & D reports Title Investigation of inverted distributions of charge carriers in strained materials in terahertz spectrum range popup.stage_title Head Tulupenko V.N., Registration Date 18-03-2003 Organization Donbass State Engineering Academy popup.description2 Basic characteristics of resonant impurity states in uniaxially stressed p-Ge for the case of Coulomb impurity potential are calculated; impurity scattering of holes in presence of resonant states is studied. Spontaneous emission in a strong electric field from uniaxially stressed p-Ge is studied experimentally, alteration of polarization vector direction of the emitted radiation with increase of uniaxial stress of p-Ge is detected. Current-voltage characteristics and spontaneous emission of quantum-sized stressed GeSiGe structures are obtained Product Description popup.authors popup.nrat_date 2020-04-02 Close