Search academic texts

Information × Registration Number 0204U000744, 0101U004305 , R & D reports Title The intraband transitions in semiconductor nanostructures: creation of new sources of TNz- radiation popup.stage_title Head Sarbey O.G., Registration Date 20-02-2004 Organization Institute of physics NASU popup.description2 In InGaAs/AlGaAs heterostructures with quantum wells (QW) at optical pumping radiation on the average infra-red (IR) areas of a spectrum is received at simultaneous generation near IR radiations. It is revealed, that reduction of intensity IR radiation in InGaAs/AlGaAs heterostructures with QW at occurrence N-shaped current-voltage characteristic in lateral electric field is connected to formation of strong field domains. It is shown, that for reception terahertze radiations in Si/GeSi heterostructures with QW, doping in edge of QW more effectively than doping in centre of QW.5635 Product Description popup.authors popup.nrat_date 2020-04-02 Close