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Information × Registration Number 0204U006004, 0102U000045 , R & D reports Title ELECTRICAL AND OPTICAL PROPERTIES OF SIGE NANOSTRUCTURES popup.stage_title Head Valakh Mykhajlo Yakovych, Доктор фізико-математичних наук Registration Date 15-06-2004 Organization Institute of Semiconductor Physics popup.description2 Final report consists of 25 pages, 8 figures, 15 references. Object: self-induced Ge/Si nanoislands obtained by molecular-beam epitaxy. Aim: development of the physical basis of self-induced growth of SiGe nanostructures on Si substrate during the molecular beam epitaxy; experimental and theoretical study of the electron and phonon energy spectra, optical transitions in quantum-size layers and QD arrays. Methods: Raman scattering, atomic force microscopy, high-resolution X-ray diffraction. Using AFM the dependency of the density, volume and shape of SiGe islands on the growth temperature was established. From the Raman and HRXRD results the values of strain and composition were derived for different temperatures of epitaxy. The islands were shown to have a mixed SiGe composition due to the diffusion of Si atoms from the substrate to islands during growth. This process is significantly enhanced at elevated temperatures and leads to enlargement of the stability region of pyramids with different volumes.Key words: molecular-beam epitaxy; germanium, silicon, self-assembling, tunneling and capacitance spectroscopy, spectrum of states, quantum wells and quantum dots, radiative recombination. Product Description popup.authors popup.nrat_date 2020-04-02 Close