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Information × Registration Number 0205U004164, 0103U003082 , R & D reports Title Investigation of the prjcesses of low temperature formation modification and properties of nanocrystalline films on the basis of silicon carbide popup.stage_title Head Lopin Aleksandr Vladimirovich, Registration Date 03-03-2005 Organization Institute for Single Crystals Scientific and Technology Association "Institute for Single Crystals" National Academy of Sciences of Ukraine popup.description2 The process of the growth of CdZnTe single crystals by original equipment is worked out. Obtained is experimental crystalline ingot with large blocks in the central part. The average specific resistance of the ingot is 5x1010 Ohm cm (300 K). The gamma-detectors made on the base of this material are characterized by the ratio "signal-to-noise" equal to 5/1 (for 59.5 keV 241 Am isotope radiation) which corresponds to the parameters of spectrometric nuclear detectors.5635 Product Description popup.authors popup.nrat_date 2020-04-02 Close