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Information × Registration Number 0205U006320, 0102U005422 , R & D reports Title Development of a basic process of deriving GaAs implanting structures for microelectronic devices. popup.stage_title Head Ijnin Igor, Registration Date 04-10-2005 Organization The closed Joint-stock Company "Research-and-production concern "Science" popup.description2 Object of research it is ionic - implanted structures GaAs which have received on semiinsulated substrate of GaAs and experimental samples of the Halls gauges which have made on their basis. The purpose of work was carrying out of researches and development of technology of reception is ionic - implanted structures of arsenide of gallium for microelectronic devices, in particular for Halls gauges, approbation of ionic - implanted structures for Halls manufacturing Halls gauges. For reception of ionic - implanted structures GaAs it was carried out ionic implantation by ions Si + which sources were monosilane and photon heating semiconductor structures. Structures have been approved for manufacturing sensitive elements of gauges of the Halls gauges, the technology of their manufacturing is fulfilled. Product Description popup.authors popup.nrat_date 2020-04-02 Close