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Information × Registration Number 0206U000281, 0106U000171 , R & D reports Title The investigation of the influence of preparation the vacuum chamber for the melting of Si crystals by the floating zone method in the helium stream on the concentration of doped and bachground admixtures popup.stage_title Head Baranskii Petro Ivanovich, Registration Date 19-01-2006 Organization Institute of Semiconductor Physics of National Academy of Sciences of Ukrain popup.description2 The influens of different metods preparing of the vacuum chamber on the oxygen impurity in Si crystals has been established. By means of the IR-spectroscopy it was shown that independently from methods preparing of the vacuum chamber the concentration of interstitial oxygen atoms in Si crystals after melting constituent about 10 cm . Product Description popup.authors popup.nrat_date 2020-04-02 Close