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Information × Registration Number 0206U000727, 0103U005982 , R & D reports Title Radiation and thermal effects study in heterogeneous crystals and nanoelectronic structures based on of GaAs, Si, GaN popup.stage_title Head Danilchenko B.A, Registration Date 02-02-2006 Organization Institute of physics NASU popup.description2 The results of experimental and theoretical investigations the high-energy irradiation by electrons and ? -quanta influence on the electro physical properties of semiconductors and related devises are repor ted. The role of isovalent impurity such as carbon, tin and lead in silicon radiation resistance increasing has been studied in details. Both experimental and theoretical investigations show new abilities in radiation resistance increasing of solar sells based on gallium arsenide.5635 Product Description popup.authors popup.nrat_date 2020-04-02 Close