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Information × Registration Number 0206U004048, 0111U007039 , R & D reports Title Nucleation and evolution of the complex defect structure in single-crystalline solid solutions and new synchrotron-compatible methods of its investigation popup.stage_title Head Kyslovskyy Yevgen Mykolayovych, Registration Date 08-02-2006 Organization Institute for metal physics NAS Ukkraine popup.description2 New method for highly informative quantitative characterization of the complicated defect structure in single crystals have been developed by the complex application of double- and triple-crystal diffractometers with the utilization of new approaches to accounting for instrumental factors of the diffractometers. The experimental verification of the proposed method has been carried out with using silicon samples, which have been cut from the ingot grown by Czochralski method and annealed for 50 h at 750, 1000, and 1160 C, respectively. The complicated defect structure in these samples, which consists of oxygen precipitates, stacking faults, intrinsinc and impurity point defects, has been investigated. The computer simulation of the evolution of complex defect structure consisting of oxygen precipitates and dislocation loops in silicon single crystals has been carried out at various conditions of thermal anneals. The comparative analysis of computer simulation results with those of X-ray diffractometric investigations has been performed. Product Description popup.authors popup.nrat_date 2020-04-02 Close