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Information × Registration Number 0206U004820, 0103U003788 , R & D reports Title The investigation of the photoelectric injection -plasm am plicication in compensated semi- conductors popup.stage_title Head Voloshanovs'kyj I.S., Registration Date 20-03-2006 Organization Odessa I.I. Mechnikov"s National University. Scientific Department popup.description2 The object of research injector frames on the basis is high of semiconductors (Ge, Si, AlGaAs). The purpose of activity to work out a concept of photoelectric injected strengthening in compensated semiconductors. The physical gears сarry of a current are offered at direct influencing of light on motility of charge carriers. The photoelectric characteristics injected gradet and superficially - barrier frames depend on a magnetic field, pressure. The models of sensors of light, magnetic field, pressure are designed5635 Product Description popup.authors popup.nrat_date 2020-04-02 Close