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Information × Registration Number 0207U000158, 0104U008840 , R & D reports Title Development of zonde (ASM - atomic power microscopy, STM - scanning tunnel microscopy) methods for the directed forming of semiconductor electric qualities nanostructure popup.stage_title Head Kanevsky Vasily, Registration Date 11-01-2007 Organization The closed Joint-stock Company "Research-and-production concern "Science" popup.description2 There has been created an experimental technological line for realization and control of local charge under sonde of atomic-force microscope which makes possible to carry out operations in room and in any controlled atmosphere and also in medium vacuum. Carried out an analysis and determined methods of electrostatic force microscopy which can be implemented during creation and control of local charge under sonde of atomic-force microscope. Considered questions of getting maximal sensitivity and resolution while creation and control of local charge. Methodic approaches and conditions of their realization have been determined. There have been chosen practical ways of creation and control of local charge under sonde of atomic-force microscope and carried out series of experimental technological line tests. There has been showed capacity for work of created technological line. Carried out local charge and control of nano-thin SiO2 oxide on silicon lining under sonde of atomic-force microscope. During operation in vacuum there where obtained stable in time (test lasted 10 hours) blurs of charge of high contrast with diameter on half-height 110 nm. Results correspond to highest achievements of foreign groups for chosen oxide. There has been shown that nano-thin SiO2 layers on silicon lining with built-in planar Si nano-crystal layer, obtained with implantation of Si ions with following temperature annealing, can be suitable material for carrying out stable in time charging record of information of super high density under sonde of atomic-force microscope. For giving oxide layers with nanocrystals necessary qualities there should be kept found conditions of creation. There has been performed an experiment on finding optimal regimes for carrying out topographic electrostatic measuring in vacuum Product Description popup.authors popup.nrat_date 2020-04-02 Close
R & D report
Head: Kanevsky Vasily. Development of zonde (ASM - atomic power microscopy, STM - scanning tunnel microscopy) methods for the directed forming of semiconductor electric qualities nanostructure. (popup.stage: ). The closed Joint-stock Company "Research-and-production concern "Science". № 0207U000158
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Updated: 2026-03-21