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Information × Registration Number 0207U000854, 0103U008759 , R & D reports Title Development of technology of the growth of semiconductor monocrystals A2 B6 group with impurity for lasers infrared region with friquence tuning popup.stage_title Head Komar Vitaliy Korneevich, Registration Date 13-02-2007 Organization Institute for Single Crystals Scientific and Technology Association "Institute for Single Crystals" National Academy of Sciences of Ukraine popup.description2 It is established that the growth of ZnSe:Cr2+ crystals from the melt under the pressure of argon in an original multizone crystallization unit allows to obtain a crystalline material which complies with the requirements to the elements of laser optics. The used technology of doping permits to grow laser ZnSe:Cr2+ crystals with an optimum concentration of Cr impurity (~1018cm-3). Achieved for a laser element made of ZnSe:Cr2+ crystal is tunable generation in the range of 2100...2500 nm with a pulse energy at the maximum of about 5 mJ. The performed technological investigations are for the first time summed up in the technigue of the growth of ZnSe:Cr2+ crystals for solid tunable IR-lasers.5635 Product Description popup.authors popup.nrat_date 2020-04-02 Close