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Information × Registration Number 0207U000968, 0106U010133 , R & D reports Title Development of technological processes of manufacturing and research of test samples of diode structures based on III-nitrides epitaxial structures popup.stage_title Head Boltovetc Мykola, Registration Date 16-02-2007 Organization State Scientific-Reseach Institute "Orion" popup.description2 Scientific and technical decisions developed for creating the technology of making diode structures on the basis of all-epitaxial structures of III-nitrid are realized. The of diode structures on the basis of all-epitaxial structures of III-nitrid are investigated. Technology of making Gunn diode was based on the all-epitaxial structures of nitrid of gallium of type of n+-n-n+, grown on the sapphire single-crystal substrate. The thickness of layers are 0,3 мкм, 2,5 мкм and 2,5 мкм with the concentration of charge carriers is 5-7·10^18см^-3, 1·10^17см^-3 и 5-7·10^18см^-3 accordingly. Product Description popup.authors popup.nrat_date 2020-04-02 Close