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Information × Registration Number 0207U002303, 0103U002180 , R & D reports Title Radikal chemiepitaction of nanolayers on the surface of elementary and two-component semiconductiors. popup.stage_title Head Yanovsky A.S., Registration Date 23-01-2007 Organization Zaporozhye National University popup.description2 The processes of silicon films growth on the hydrogen-terminated silicon surfaces by CVD-method from silane (SiH4) have been studied. The experimental research of gas phase radicals influence on InP surface was realized. Thin GaN films formation on the GaAs substrates and its structure have been studied. Thin GaN films were obtained by GaAs modification in nitrogen radicals gas atmosphere. The results of quantum-chemical calculations of semiconductor Ge(100), Si(100) surfaces, results of calculations of Al adsorption on clusters simulating ordered Ge(100)-(2ґ1) surfaces are presented. Adsorption barriers, "surface-adsorbate" bonds energy, electronic states of surfaces with adsorbed and implanted atoms or ions were calculated. Results of investigations were used in 8 articles, 11 reports on the conferences, 2 lecture courses and thesis of candidate degree of physics and mathematics. Product Description popup.authors popup.nrat_date 2020-04-02 Close