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Information × Registration Number 0207U005375, 0104U000893 , R & D reports Title The investigation of processes of degradation of semi-conductor solid solutions CdTe-ZnTe popup.stage_title Head Peleshchak Roman Mykhailovych, Registration Date 04-04-2007 Organization Drohobych Ivan Franko State Pedagogical University popup.description2 The aim of this study is to work out the optimum technological conditions for obtaining homogeneous semiconductor compounds CdxZn1-xTe by sublimation and investigation of defect influence on degradation process of their physical parameters. Single crystals CdxZn1-xTe were grown and their treatment was done in hydrogen environment at different pressures in the temperature range of 300-500 0C. It is found that growth in hydrogen atmosphere makes little effect on defect state spectrum in CdxZn1-xTe however, crystals are saturated with hydrogen which is shown in their electric and photoelectric properties at liquid hitrogen temperature (77 K). It is found that sample treatment in oxygen atmosphere leads to the electric resistivity increase. It is caused by impuring level energy spectrum change. Semiconductor physics. Product Description popup.authors popup.nrat_date 2020-04-02 Close