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Information × Registration Number 0208U000316, 0107U005749 , R & D reports Title Development of technology of fabrication of SiC thin films and creation of micro-electromechanichal structures and light-emitting devices on their basis popup.stage_title Head Lysenko Volodymyr Sergiyovych, Registration Date 23-01-2008 Organization Institute of Semiconductor Physics of NAS of Ukraine popup.description2 It was developed the technology for deposition of hydrogenated and non-hydrogenated amorphous silicon carbide films bymagnetron sputtering techniques. Structural? Luminescent and mechanical properties of these films were studied. Optimal conditions of thermal treatments for obtaining of the intense photoluminescence were found. Product Description popup.authors popup.nrat_date 2020-04-02 Close