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Information × Registration Number 0208U000813, 0105U001127 , R & D reports Title Low- temperature obtaining of films based on silicon and carbon carbide at low-energy ion deposition popup.stage_title Head Semenov Aleksandr Vladimirovich, Registration Date 20-02-2008 Organization Institute for Single Crystals Scientific and Technology Association "Institute for Single Crystals" National Academy of Sciences of Ukraine popup.description2 Modernized is the ion plasma unit which allows to grow films with a diameter of 5 cm at a rate of 1 mcm/min. Under the conditions of direct deposition of 90-100 eV C and Si ions at temperatures from 700 to 1000 C, the cubic polytype of silicon carbide is obtained. At substrate temperatures higher than 1000 C, the rhombohedral polytype a-SiC 21 R grows. The content of 3C-SiC nanocrystalline phase runs into 80 at. % at 950 C.The size of SiC crystallites depends on the substrate temperature and varies from 4-5 to 8-10 nm at tempeatures from 700 to 950 C. At 1020 C nanocrystalline silicon carbide film of the rhombohedral modification with ~ 80% crystalline phase content is obtained. The average size of crystallites in this film is 10-12 nm.5635 Product Description popup.authors popup.nrat_date 2020-04-02 Close