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Information × Registration Number 0208U000818, 0105U001131 , R & D reports Title Development of micro- and opto-electronic technologies popup.stage_title Head Dan'ko Aleksandr Yakovlevich, Registration Date 20-02-2008 Organization Institute for Single Crystals National Academy of Sciences of Ukraine popup.description2 A technology of the obtaining of high-purity (99.995 % of Al2 O2) cheap raw material for the growth of sapphire by HOC method is developed and optimized under the conditions of pilot production. It includes thermochemical purification of alumina in reducing gaseous medium, its melting not using crucible and subsequent fusion of the raw material at intense convection of the melt. Created is a division for the obtaining of the raw material with a capacity up to 3 t/year. Developed is a technology for the production of sapphire substrates with (0001) orientation for epitaxy of electroluminescent structures. The obtained technical characteristics of the substrates compare favorably with the world standards: the diameter is 3-5 in., the dislocation density < 104 cm- 2 , the oscillation curve halfwidth is 6-9 ang.sec., low-angle block boundaries are absent, the surface roughness < 2A, the deviation of the working surface from the crystallographic plane (0001) does not exceed 15 min.5635 Product Description popup.authors popup.nrat_date 2020-04-02 Close