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Information × Registration Number 0208U000873, 0107U005740 , R & D reports Title Development of profiled germanium crystal growth method popup.stage_title Head Pekar Grugoriy Solomonovich; Lokshin Mykhaylo Markovich, Registration Date 21-02-2008 Organization Institute of Semiconductor Physics of NAS of Ukraine popup.description2 Technology for Germanium profiled crystal growing is developed. To obtain an optical-grade Germanium, the new original method for Germanium doping is used. By a method developed, optical-grade Germanium crystals of different shape (cylinders, rectangular parallelepipeds, plates with rounded edges) were grown. The crystal sizes were varied in a wide range of values. Physical parameters of grown crystals, such as the homogeneity of physical characteristics over the crystal volume, optical transmission and directed optical transmission in the infrared spectral region, level of crystal perfection, etc., were found to correspond to the highest up-to-date achievements for optical germanium. During the period of project performance, the grown profiled optical-grade Germanium crystals were exported to the USA and Germany. Product Description popup.authors popup.nrat_date 2020-04-02 Close