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Information × Registration Number 0208U002104, 0106U005638 , R & D reports Title A portable instrument for X- and gamma radiation measurement popup.stage_title Head Gnatyuk Volodymyr, Registration Date 16-01-2008 Organization V.Laskaryov Institute of Semiconductor Physics NAS of Ukraine popup.description2 During implementation of project theoretical and experimental researches were conducted that touch development of sensible elements for detectors x-ray photography and gama of radiation on the basis of diodes, made on a base visokoomnogo semiconductor of CdTe. Physical and technological development of bar'ernikh structures, formed in the semiinsulating crystals of CdTe compensated a chlorine processes were studied, in particular, diodes with the contact of Shottki and with a p-n transition. The special attention was spared forming of p-n transition in the superficial area of CdTe by an impulsive laser radiation. The methods of forming of omichnikh contacts of Ni/CdTe and contacts of Shottki Al/CdTe are developed, probed electric and photo-electric descriptions of diode structures of Al/CdTe/Ni and the mechanisms of generation, rekombinacii and transfer of charge, are analysed in such structures. For measuring of real I-V characteristic on the contact of Shottki pidsvitka of standard of Al/cdte/ni was utillized with the proper wave-length with the purpose of diminishing of resistance of the visokoomnoy lining (to the ob'emu crystal of Cdte) and, accordingly, its influencing on I-V characteristic. Product Description popup.authors popup.nrat_date 2020-04-02 Close