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Information × Registration Number 0208U002200, 0107U005782 , R & D reports Title Development of methods and equipment for optical diagnostics of nanoscale Si popup.stage_title Head Lytovchenko Volodymyr Grygorovych; Lisovsky Igor Petrovych, Registration Date 18-01-2008 Organization V.Laskaryov Institute of Semiconductor Physics NAS of Ukraine popup.description2 Inexpensive methods of measurement of the major characteristics silicon nanocrystals, such as were the purpose of researches working out and creations reliable, fulfilled and enough: the size, concentration, uniformity of distribution in a dielectric matrix. Composit materials - ncSi/SiOx and ncSi/Si2 were object of researches. For purpose achievement methods of a spectral photoluminescence, IR-spectroscopy, atomic-force microscopy and electronic microscopy with high resolution were used. Also technological conditions of reception of high-quality structures of nanocrystalline silicon have been defined. Communication between optical properties of nanosize crystals of silicon and is theoretically considered their sizes. The technique of definition of the sizes silicon nano-inclusions and their disorder on the basis of the analysis of spectra of a photoluminescence is developed. The technique of definition of structural characteristics of oxigen matrixes with built in nc-Si particles on the basis of IR-spectroscopy with the analysis of the form of a strip of absorption is developed. Correlation of data of electronic microscopy with results of the offered method is established. Certification of nanocrystalline silicon material of different type is spent. The carried out researches are accompanied by detailed patent search in questions which are considered in R and D project. Results of R and D project can be used in electronic industry at creation light of radiators and memory elements on base of nanosize silicon. NANOSIZE SILICON, PHOTOLUMINESCENCE, IR- SPECTROSCOPY Product Description popup.authors popup.nrat_date 2020-04-02 Close