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Information × Registration Number 0208U005764, 0107U009261 , R & D reports Title Investigation influence of impurity-defect subsystem on spin effects in volume wide-zone and narrow gap semimagnetic semiconductors А2 1-х Мх В6 and geterostructure on their base popup.stage_title Head Paranchych Stepan Yuriyovych, Registration Date 11-09-2008 Organization Yuri Fedkovych Chernivtsi National University popup.description2 A cycle of technological investigations considering the CrxHg1-xSe, CdxHg1-x-yCrySe solid solutions growth via various methods, i.e. Bridgman one, solid state crystallization, has been performed. Optimal technological conditions of crystal growth as well as of the structures on their basis have been set. The ternary and quaternary solid solutions of CrxHg1-xSe, CdxHg1-x-yCrySe pointed out a possibility to organize the inclusions different in nature from the basic matrix. Product Description popup.authors popup.nrat_date 2020-04-02 Close