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Information × Registration Number 0208U006235, 0107U005757 , R & D reports Title Development of heterostructures based on wide ban gap II-VI compounds and sensor systems on their basis for detection of ultraviolet radiation popup.stage_title Head Komaschenko Valeriy Mykolayovych, Registration Date 02-07-2008 Organization V.Lashkaryov Institute of Semiconductor Physics National Academy of Sciences of Ukraine popup.description2 A procedure for preparation of high-quality p-n-n-heterostructures with nano- and submicron layers in a system of lattice-mismatched wide-gap II VI compounds was developed, and such heterostructures were made for the first time. It is shown that quantum efficiency of layered heterostructures (in particular, p-Cu1.8S/i-CdTe/n-CdS) is close to the theoretical limiting value. We gave a substantiation of the physico-technological principles of design of efficient UV radiation sensors based on submicron photosensitive films of wide-gap semiconductors grown on an orienting narrow-gap substrate. For the first time, the new-generation broad-range and selective semiconductor UV sensors based on wide-gap II VI compounds were developed. Their operating parameters fit with the present-day requirements. A sensor system for quick measurements of radiant power of UV radiation is developed and made. It can operate in three UV spectral ranges (UV-A, UV-B, and UV-C) and four their combinations, namely, UV(A+B+C), UV(A+B), UV(B+C), and UV(A+C). The possible application areas of the instrument involve environmental monitoring, noise-immune UV ranging (objects observation against the blue-sky background), industry, medicine, biotechnology, and household appliances. Product Description popup.authors popup.nrat_date 2020-04-02 Close