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Information × Registration Number 0208U006680, 0107U005421 , R & D reports Title Influence of defects of a radiating origin on parameters of the photoactive centers in chalkogen semiconductors AIIBVI popup.stage_title Head Davidyuk G., Registration Date 18-12-2008 Organization Lesya Ukrainka Volyn National University popup.description2 It is set that more radiation proof after the optical properties in relation to a x-ray photography irradiation there is nelegovannye, malodefektnye single-crystals CdS, that opens the prospect of their use as base materials, proof to the x-ray photography radiation of electronic and optronic devices, sensors and dosimeters of x-ray photography radiation. Single-crystals AgCd2GaS4 are fotochustvitel'nymi materials, that does their perspective for creation on their basis of radiaciyno-stiykikh sensors of electromagnetic radiation, geteroperekhodiv fotochustvitel'nykh in visible and near infra-red of spectrum. Product Description popup.authors popup.nrat_date 2020-04-02 Close