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Information × Registration Number 0209U002166, 0108U007175 , R & D reports Title Development of draftdesign documentation and basic technique processes of MM-wave high power Si pulse IMPATT diodes and InP Gunn diodes production popup.stage_title Head Boltovetc Мykola, Registration Date 21-01-2009 Organization State Scientific-Reseach Institute "Orion" popup.description2 The computer analysis of the thermal modes of operations of pulse Si IMPATT-diodes at 300 ns duration of operating current is conducted and optimization of requirements to the parameters of double drift mesa doping of p+-n-n+-type IMPATT-diodes are performed. The model standards of pulse IMPATT-diodes are made, intended for the frequency range of 33-35 GHz with pulse power more than 20 W. Their HF and microwave characteristics are investigated in the temperature range. A technical documentation on pulse IMPATT-diodes intended for operating at frequency range of 33-35 GHz is developed. The design-engineering simulation of InP Gunn diodes is conducted and requirements are determined to the all-epitaxial structures of InP and transformation elements of Gunn diode packages on the operating frequency range of 60-100 GHz. The base technological processes of InP Gunn diodes mesas forming are performed. Product Description popup.authors popup.nrat_date 2020-04-02 Close