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Information × Registration Number 0209U002527, 0106U001627 , R & D reports Title Research and development of the structural-technological principles of creation CMOS BMC and microsystem technique elements based on the "silicon-on-insulator"-structures. popup.stage_title Head Kogut Igor Tymophiyovych, Registration Date 17-02-2009 Organization Precarpathian university named after Vassyl Stefanyk popup.description2 In the process of work complex researches and analysis of modern technologies formation SOI-structures are conducted, on this basis the ways of researches are produced in relation to creation of new original technologies, developed and simulated technologies of forming the local three-dimensional SOI-structures, the original device elements are developed, in particular three-dimensional contacts, switch SOI- elements on the Shottki didodes, field-emission of silicic cathodes with the control cirquits, library of digital and analogs elements on the SOI-structures for the construction of SOI CMOS BMC, SOI-structures are explored for ekstremal conditions, in particular, for extremal low temperatures of helium and strong magnetic fields. Product Description popup.authors popup.nrat_date 2020-04-02 Close