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Information × Registration Number 0209U005054, 0106U012285 , R & D reports Title Formation of epitaxial films of Mn4Si7 silicide on monocrystalline Si. Формування нанорозмірних епітаксійних шарів силіциду Mn4Sі7 на монокристалічному кремнії popup.stage_title Head Sidorenko Sergiy Ivanovich, Доктор фізико-математичних наук Registration Date 14-01-2009 Organization The National Technical University of Ukraine "Kyiv Politechnical Institute"; Engineering-physical faculty popup.description2 By the complex applied modern methods of physical material science - X-ray analyses, resistometry, transmission electron microscopy ("cross-section"), scaning electronc microscopy, Rutherford back-scattering it is investigated the conditions of formation by template method of Mn4Si7 epitaxial film in (Mn+Si)/Si(001) thin film system at 0,1 - 1,6 nm thicknesses of Mn intermediated layer. It is established the regularities of change of phase composition and electrophysics properties of films. It is established the use of Mn intermediated layer of 0,8 nm thickness promotes the growth of more uniform, closed silicide layers of Mn4Si7. For samples with 0,8 nm of Mn it is established existance of Mn4Si7 grains with preferential orientation of (110)[441]Mn4Si7¦(001)[110]Si. Total thickness of silicide layer is 50 nm. The experimental results and set regularities have the practic interest for improvement of the production regims and regims of heat treatment at creation of the necessary structural-phase states in thin film technologies of electronic industry and also in industry of nanotechnology. Product Description popup.authors popup.nrat_date 2020-04-02 Close