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Information × Registration Number 0209U008182, 0107U005660 , R & D reports Title Research and development of microwave sources in sub millimeter range on the base of multi-layer semiconductor structures and on the base of GaAs/AlAs, Ga/Al two-barrier quantum structure popup.stage_title Head Karushkin Мykola Fedorovuch, Registration Date 29-01-2009 Organization State Scientific-Reseach Institute "Orion" popup.description2 It is known that the semiconductor devices parameters are sharply worsened with frequency growth especially in area of frequency range over 100 GHz. At these frequencies the low-powered Gunn oscillators or IMPATT oscillators are realised with the use of varactor frequency multipliers. At frequencies more than 200 GHz practical realization of such sources of power is laboured. Influence of crystal length and parameters of the external electrodynamic system (quality and loading conduction) are developed on multipliers power parameters. T During this researches experimental models of microwave power source in the frequency range of 150-200 GHz with output power 10-5 мВт on the basis of multi-layered semiconductor Si IMPATT structures with negative conductivity by radioimpule frequency conversation of high-stable signal are developed and manufacturing. Product Description popup.authors popup.nrat_date 2020-04-02 Close