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Information × Registration Number 0210U000103, 0107U001095 , R & D reports Title Ultraviolet laser on the basis on nanoporous GaAs popup.stage_title Head Kidalov Valeriy, Доктор фізико-математичних наук Registration Date 20-01-2010 Organization Berdyansk State Pedagogical University popup.description2 Be obtained nanoporous A3B5 compounds on substrates with different crystallographic orientation and surface morphology of different GaAs, GaP and InP epitaxial thin films and GaN with minimal mechanical stress by nitrydization substrates GaAs, GaP. 2. Optimized performance parameters a nanoscale heterostructures, "the third group nitride / semiconductor A3B5" and received heterostructures "third group nitride / A3B5" (type GaN / GaAs, GaN / GaP) or porous A3B5 (type GaN / por-GaAs , GaN / por-GaP). Product Description popup.authors popup.nrat_date 2020-04-02 Close