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Information × Registration Number 0210U001110, 0110U006101 , R & D reports Title The development of nanotechnology of Ge structures on basic of GaAs and Si for manufacturing of electronic devices popup.stage_title Head Shwarts Yuriy Mikhailovich, Registration Date 18-01-2011 Organization Institute of Semiconductor Physics of National Academy of Sciences of Ukrain popup.description2 As a result of the stage N1 of the work, the basic technological regimes for growth of nanofilms of germanium were determined: vacuum in the chamber - no worse than (2-5)x10^-6 Tor, the temperature of evaporated - 1400-1600 ^oC; the deposition rate of Ge - 0,1 -100 nm / s, the error of measuring the temperature of the substrate - + -5 ^oC. The developed technology is based on the use technological base and raw materials in Ukraine. Product Description popup.authors О. Фонкіч Шварц Юрій Михайлович popup.nrat_date 2020-04-02 Close