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Information × Registration Number 0210U001414, 0108U009682 , R & D reports Title Development and production organization of high-voltage SiC p-і-n diodes for the microwave and millimeter-wave range popup.stage_title Head Boltovets Mykola Sulovuch, Registration Date 11-02-2010 Organization State Scientific-Reseach Institute "Orion" popup.description2 As a result of experimental-technological development fulfilled a design-engineering decision for creation of packaged high-voltage fast microwave SiC p-і-n diodes with break-down voltage no less than 500 V has been obtained. Those diodes are able to increase switching speed of microwave modules 20-50 times and rise their admissible temperature from 80-120°С up to 300-400°С in comparison with silicon p-і-n- diodes. Product Description popup.authors В.А. Кривуца В.В. Басанець К.О. Личман Л.В. Журавель Л.К. Птушкін Л.М. Суворова М.І. Миколаєнко М.С. Болтовець Н.А. Казюка Н.Я. Урицька О.С. Слєпова Т.І. Голинна Т.В. Коростинська Т.М. Лєдєньова popup.nrat_date 2020-04-02 Close
R & D report
Development and production organization of high-voltage SiC p-і-n diodes for the microwave and millimeter-wave range
Head: Boltovets Mykola Sulovuch. Development and production organization of high-voltage SiC p-і-n diodes for the microwave and millimeter-wave range. (popup.stage: ). State Scientific-Reseach Institute "Orion". № 0210U001414
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Updated: 2026-03-18


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