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Information × Registration Number 0210U001844, 0109U007211 , R & D reports Title Investigation and development of manufacturing technology for indium phosphide-based 3 mm-wave Gunn diodes with improved energy characteristics popup.stage_title Head Kudryk Yaroslav Yaroslavovich, Registration Date 20-04-2010 Organization Institute of Semiconductor Physics of National Academy of Sciences of Ukrain popup.description2 A comparative analysis of procedures used to measure the contact resistance Rс of ohmic contacts of semiconductor n-n+-structures and bulky samples is made; this procedure is chosen and optimized for the technical process. It is tested for the Au-TiBx-AuGe-n-InP structures. The minimal Rс (1.2Е-6 Ohm•cm2) for the Au-TiBx-AuGe-n-InP ohmic contact was obtained after RTA at Т = 500 °С for 40 s. Before and after RTA, the component depth profiles are studied; the thickness and composition of the junction layer at the AuGe-n-InP interface are determined. Product Description popup.authors Конакова Раїса Василівна Кудрик Ярослав Ярославович Шеремет Володимир Миколайович Шинкаренко Володимир Вікторович popup.nrat_date 2020-04-02 Close