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Information × Registration Number 0210U004475, 0108U010557 , R & D reports Title Product technology development of the pulse power high voltage Si microwave p-i-n diodes for advanced commercial systems popup.stage_title Head Krivutsa Valentin Antonovich, Registration Date 29-12-2010 Organization State Scientific-Reseach Institute "Orion" popup.description2 As a result of accomplishment of R&D technological works scientific and technological solutions for making basic technologies of manufacturing pulse power high-voltage Si microwave рin diodes with breakdown voltage over the range 1500-2000 В have been found. Diodes are designed for microwave signal commutation over the frequency range of 1-40 GHz and used in systems of wide purpose. Product Description popup.authors Басанець В.В. Болтовець М.С. Голинна Т.І. Журавець Л.В. Коростинська Т.В. Лєдєньова Т.М. Личман К.О. Миколаєнко В.І. Слєпова О.С. Суворова Л.М. popup.nrat_date 2020-04-02 Close