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Information × Registration Number 0210U005112, 0107U006752 , R & D reports Title Self-assembling of spatially-periodic nanoobject in the semiconductor systems. popup.stage_title Head Valakh Mykhail Yakovlevitch, Registration Date 08-06-2010 Organization Institute of Semiconductor Physics of National Academy of Sciences of Ukrain popup.description2 Quantum dot Ge/Si structures grown on Si1-xGex buffer layer with different composition were investigated by micro-Raman spectroscopy with spatial resolution less than 1 mkm. It was established, that increase of Ge content in additional Si1-xGex buffer layer lead to increase of the island sizes and surface coverage. It also results in appearance of spatial ordering in the growth plane and in improvement of their crystalline structure. Considerable increase of the island volume occurs due to intense diffusion of Si and Ge atoms from the intermediate buffer layer and lower Si buffer layer, and at 22% Ge content in intermediate layer considerable part of its volume moves into islands. Germanium content in formed islands and buffer layer weakly differs at varying the Ge content in initial intermediate layer from 18% to 22%. It was figured out, that for island growth on intermediate Si1-xGex buffer layers great meaning has the growth kinetics, which is characterized by considerable matter diffusion from the intermediate layers into the islands, the efficiency of latter intensifies with increase of Ge content. Product Description popup.authors Джаган Володимир Миколайович Кладько Василь Петрович Коломис Олександр Федорович Корбутяк Дмитро Васильович Крюченко Юрій Володимирович Литвин Оксана Степанівна Литвин Петро Марянович Прокопенко Ігор Васильович Рудько Галина Юріївна Стрельчук Віктор Васильович Юхимчук Володимир Олександрович Янчук Ігор Богданович Яремко Анатолій Михайлович popup.nrat_date 2020-04-02 Close