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Information × Registration Number 0210U005731, 0109U006172 , R & D reports Title Investigation of modifications of defect structure induced by magnetic field in III-V compounds popup.stage_title Head Milenin Victor, Registration Date 05-01-2011 Organization V.Laskaryov Institute of Semiconductor Physics NAS of Ukraine popup.description2 Influence of the weak magnetic fields, which energy much less thermal, causes changes of intensity of bands of GaP photoluminescence and parametres of a roughness of a surface of the semiconductor. It was found out effects of long-term changes of intensity of a luminescence and surface morphology. The observable magnito-induced effects are caused by reorganisation of defects in GaP crystals. Results of a scientific and technological work can be used for not thermal activation of physical and chemical processes of formation of layers on GaP surface region Product Description popup.authors Мілєнін Віктор Володимирович Редько Роман Анатолійович popup.nrat_date 2020-04-02 Close