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Information × Registration Number 0210U005733, 0109U006172 , R & D reports Title Investigation of modifications of defect structure induced by magnetic field in III-V compounds popup.stage_title Head Milenin Victor, Registration Date 05-01-2011 Organization V.Laskaryov Institute of Semiconductor Physics NAS of Ukraine popup.description2 The effect of nonmonotonic oscillatory changes of intensity of the radiative recombination of gallium arsenide and epitaxial layers on its basis as a result of short-term (20 mc) and long-term (up to 15 min) actions of weak magnetic fields (B=60 mT, f=10 Hz, t =2E10-3 s, t1=1 min, t2=5 min, t3=10 min, t4=15 min) is found out. It is shown that due to the influence of noted treatment processes of reorganisation of a impurity-defective composition of a semiconductor material start to operate. Most important of these processes is, as well as in case of GaP and InP, destruct of the impurity complexes with next formation of defects of new type which can be both centres of the radiative and a non-radiative recombination, and also change of optical parametres of the semiconductor. Caused by treatment in a weak magnetic field, the change of the defective structure of semiconductors should be considered at creating of semiconductor devices of different function for the purpose of prevention of uncontrollable degradations of their parametres Product Description popup.authors Мілєнін Віктор Володимирович Редько Роман Анатолійович popup.nrat_date 2020-04-02 Close