Search academic texts

Information × Registration Number 0211U001351, 0110U004655 , R & D reports Title Development and progress of method of submicron topography and passport systems of chemical composition, structural perfection, electrophysics parameters and strain distributing in the nanostructures of electronics and optoelectronics. popup.stage_title Head Strelchuk Viktor Vasylyovych, Доктор фізико-математичних наук Registration Date 31-01-2011 Organization Institute of Semiconductor Physics of National Academy of Sciences of Ukrain popup.description2 Methodological and hardware support for diagnostic methods of high-resolution optical spectroscopy and electron-diffraction microscopy for obtaining the spatial maps of distribution of structural perfection and deformations in micro- and nonstructural materials of group IV were developed within the project. Spatial maps of distributions of doping impurities and deformations in polycrystalline diamond films were obtained by micro-Raman spectroscopy and infrared Fourier spectroscopy. Non-uniform behavior of distribution of doping impurities (boron and nitrogen atoms) in diamond films was analyzed using spatial maps obtained by scanning Fourier spectroscopy. From analysis of spatial maps of valence absorption bands sp3-CH2 at 2850 см-1, sp3-CH2 at 2925 см-1 and diamond two-phonon absorption bands the spatial distribution of hydrogenated diamond-like amorphous carbon in intergranular regions of type IIa diamond was established. Spatial maps of distribution of elastic strains in the local submicron regions of microcrystalline diamond grains of polycrystalline diamond films with different crystallographic grains orientations and varied concentrations of doping impurities (boron and nitrogen atoms) were obtained by scanning confocal micro-Raman spectroscopy. Methods of submicron mapping of structure, structural perfection and deformations in individual Si nanowires with diameter from 100 nm to 1 µm were developed. Spatial maps of localization of cubic (Si I) and hexagonal (Si IV) phase in individual Si nanowires and values of frequency shift of Si I phonon line (and corresponding values of elastic strains) along individual nanowires were first experimentally obtained. Two-dimensional maps of distribution of elastic strains for the structures of micro-sensors based on the set of silicon nanowires with diameter of 500 nm produced by lithographic technique using silicon-on-insulator technology were first experimentally obtained with nanoscale resolution. Product Description popup.authors Авраменко Катерина Андріївна Брикса Вадим Петрович Валах Михайло Якович Гонтар Олександр Григорович Куліш Микола Полікарпович Ніколенко Андрій Сергійович popup.nrat_date 2020-04-02 Close