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Information × Registration Number 0211U002366, 0109U001657 , R & D reports Title Development of communications apparatus on the basis of high-efficiency power amplifiers. popup.stage_title Head Vladimir G. Krizhanovski, Registration Date 03-02-2011 Organization Donetsk National University popup.description2 The improvement of class E design procedure, where field-effect transistor's on-resistance is taken into account was presented. The class E amplifiers with SiC and GaN transistors was designed and experimentally investigated. The class F using SiC transistor and class E using GaAs MESFET transistor amplifiers with extended bandwidth where designed and modeled by the extended resonance technique. The algorithms were developed and numerical calculations where carried out for the circuits based on periodic microstrip-slotline structures to provide harmonics filtering in high-efficiency power amplifiers output networks. The device RFID for systems ближнеполевой communications is developed. Product Description popup.authors Макаров Денис Григорович Приліпська Ганна Сергіївна Рассохіна Юлія Валентинівна Чернов Дмитро Вікторович popup.nrat_date 2020-04-02 Close