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Information × Registration Number 0211U004291, 0109U001162 , R & D reports Title CdTe, CdS, СuIn1-хGахSе2 thin film fabrication and solar cells on thereof. popup.stage_title Head Ilchuk Hryhoriy Arhypovych, Registration Date 02-02-2011 Organization Lviv Polytechnic State University popup.description2 The linear dependence between the thickness and sediment amount of chemical surface deposition was demonstrated by the firs time.The principles of chemical surface deposition technology for fabrication of stoichiometric CdS films (d=0-100 nm) from aqueous solutions of cadmium salts (CdSO4, CdCl2, CdI2) at temperatures T <363 K was developed. The CdS films weare polycrystalline with low concentrations of surface makrodefect (107sm-2) and possesses semiconductor properties. It was proved that the CuInSe2xS2(1-x) semiconductor solid solutions thin films can be fabricated by chemical deposition. The physical and chemical basis of such films, alternative to СuIn1-хGахSе2, fabrication technology was developed. The conditions for fabrication of CuInSe0,24S1,76 semiconductor solid solution thin films with bandgap Eg~1,50 eV, suitable for absorber layer in heterojunction with CdS films was . In the known method close space sublimation, the new modes for polycrystalline p-CdTe films fabrication, with a uniform composition distribution and thickness in the residual gas pressure P = 4,5 o 10-4Pa, was proposed. The of research results that provide a polycrystalline p-CdTe films. The fabricated polycrystalline cadmium telluride film were homogeneously structured with thickness d = 0,76-38,52 mkm with randomly oriented crystallites. The laboratory technology for photosensitive heterostructures n-CdS/p-CdTe, n-CdS/p-CuInSe2xS2(1-x) (x = 0,12-0,32) fabrication, which are characterized by good reproducibility of rectifying and photoelectric properties in the broad (1,37-2 5 eV) spectral range, was proposed. It was demonstrated that selenium content in the CuInSe2xS2(1-x) solid solutions films controls the length spectral range (1,485-1,374eV) of the high heterostructures photosensitivity Product Description popup.authors Ільчук Григорій Архипович Антонюк Петро Васильович Горбова Оксана Іванівна Кориневський Микола Антонович Кусьнеж Віктор Вацлавович Лукіянець Богдан Антонович Лукашук Сергій Володимирович Петрусь Роман Юрійович Попович Михайло Васильович Токарев Станіслав Вікторович Українець Валентин Остапович Українець Наталя Андріївна Чекайло Микола Володимирович Шаповал Павло Йосифович Ющук Степан Іванович popup.nrat_date 2020-04-02 Close