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Information × Registration Number 0211U008861, 0110U006229 , R & D reports Title Investigations of the properties and impurity composition of silicon and degradation of its characteristics under irradiation. Optimization of the crystals growing technology for making of photovoltaic cells with improved performance. popup.stage_title Head Khyrunenko Lyudmyla Ivanivna, Registration Date 10-11-2011 Organization Institute of physics NASU popup.description2 The subject of the study is monocrystalline silicon and solid solution silicon-germanium, photodiodes. The object of work is an investigation of electro-physical parameters for plate of Si and Si1­xGex (х=0.038, 0.07) single crystals, which will be used in future for making of photodiodes; the study of doping with Ge on the generation rate of SiO2 on the surface of Si1­xGex. The study was performed with the use of infrared Fourier spectroscopy, Holl effect, relaxation of photoconductivity, four probe method. The main parameters, such as concentration of doping impurity, the value of specific resistivity, the mobility of minority carrier, the life time of majority carrier, the oxygen and carbon content were measured. Performed investigations of the homogeneity distribution of specific resistivity have shown that up to Ge concentration of x=0.1 the rise of it is nearly two time in comparison with silicon. It was shown that the generation rate of SiO2 dielectric layer on the Si1­xGex plate decreases in comparison with silicon. The duration of formation the necessary thickness of SiO2 should be corrected on the germanium content in single crystal at making of photodiodes. On the base of an analysis of existing technologies and our possibility the scheme and technology of photodiodes making with the use of Si1­xGex plate were selected. The estimation of the temperature for diffusion of phosphorus and the depth of diffusion were carried out in Si1­xGex plates. Product Description popup.authors Дуванський Андрій Володимирович Помозов Юрій Васильович Самочорних Сергій Володимирович Соснін Михайло Георгійович Хируненко Людмила Іванівна popup.nrat_date 2020-04-02 Close